Improvement in electrical characteristics of graded manganese doped barium strontium titanate thin films

Abstract

Highly (100) textured graded manganese (Mn) doped Ba0.5Sr0.5TiO3 [BST (50/50)] thin films were deposited on lanthanum aluminate substrates using sol-gel technique. We have demonstrated that the graded acceptor doping is a promising technique to reduce the temperature coefficient of capacitance (TCC), loss tangent, and leakage current of BST thin films. In the temperature range between 175 and 260 K the reported TCC of Mn graded BST (50/50) films is less than 5.55×10−4/K, which is comparable to the best capacitors known so far. The lower temperature coefficient of the capacitance of the Mn graded films has been argued to be due to the induced compositional heterogeneity resulting into a distribution of the Curie temperature.