Rectifying current-voltage characteristics of BiFeO3∕Nb-doped SrTiO3 heterojunction
- Huaiwen Yang
- Hongmei Luo
- Haiyan Wang
- Igor Usov
- N. A. Suvorova
- MJM. Jain
- David M. Feldmann
- P. C. Dowden
- R.F. DePaula
- Quanxi X. Jia
Applied Physics Letters · 2008 · American Institute of Physics
3 views · 0 downloads
Abstract
Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on (001) Nb-doped SrTiO3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p-type semiconductor and formed a p-n heterojunction with an n-type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5×104. Reverse C-V characteristics exhibited a linear 1∕C2 versus V plot, from which a built-in potential of 0.6V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.